Members
Research Expertise:
Compound Semiconductors Semiconductor Physics and Devices.
Laboratory:
Jenn-Fang Chen
Professor
Ph.D. in Electrical Engineering, State University of New York at Buffalo, USA
EDUCATION & WORK EXPERIENCE:             
1985-1989 Ph.D. Electric Engineering, State University of New York at Buffalo, USA 
1996-present Professor, Department of Electrophysics, NCTU 
2006 to 2009 Chairman, Department of Electrophysics
1991 to 1996 Associate Professor, Department of Electrophysics 
1989-1991 Postdoctor, AT&T Bell Laboratory 

                         
AREA OF RESEARCH INTEREST AND WXPERIENCE:    
Molecular Beam Epitaxial growth, Electrical characterizations of III-V compound semiconductor nanostructures, strain relaxation in InAs quantum dots 



 
Selected Publications:
1.

 
J. F. Chen, P. Y. Wang, C. Y. Tsai, J. S. Wang and N. C. Chen “Observation of carrier depletion and emission effects in capacitance dispersion in relaxed InGaAs/GaAs quantum well” Appl. Phys. Lett., 75, 2461, 1999.
 
2.

 
Y.S. Wang, J. F. Chen, P. Y. Wang, and X. J. Guo “Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots” Appl. Phys. Lett. 77, 3027, 2000.
 
3.

 
J. F. Chen, R. S. Hsiao, Y. P. Chen J. S. Wang, and J. Y. Chi “Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling” Appl. Phys. Lett. 87, 141911, 2005.
 
4.

 
C. C. Chang, J. F. Chen, S. W. Hwang, and C. H. Chen, “Highly efficient white organic electroluminescent devices based on tandem architecture” Appl. Phys. Lett., 87, 253501, 2005.
 
5.

 
J. F. Chen, R. S. Hsiao, W. D. Huang, Y. H. Wu, L. Chang, J. S. Wang, and J. Y. Chi “Strain relaxation and induced defects in InAsSb self-assembled quantum dots” Appl. Phys. Lett. 88, 233113, 2006.
 
6.

 
J. F. Chen, Ross C. C. Chen, C. H. Chiang, Y. F. Chen, Y. H. Wu, and L. Chang “Bimodel onset strain relaxation in InAs quantum dots with an InGaAs capping layer” Appl. Phys. Lett,  97, 092110, 2010.