Members
Research Expertise:
Semiconductor physics and devices, Optoelectronics Near-field emission microscopy, Nanostructures.
Laboratory:
Wei-Kuo Chen
Professor
Ph.D. Institute of Electrical Engineering, State University of New York, USA

Education:
B.S. Electrophysics, National Chiao Tung University (1981)
M.S. 
Institute of Electrical Engineering, State University of New York  ,USA (1985)
Ph.D. Institute of Electrical Engineering, State University of New York  ,USA (1990)


Work Experience:
Professor, Department of Electrophysics, National Chiao Tung University (1998-)
Associate Professor, Department of Electrophysics, National Chiao Tung University (1990-1998)



Research Focus:
Semiconductor physics and devices, Optoelectronics 
Near-field emission microscopy, Nanostructures.

Selected Publications:
1.


 
Lai YJ (Lai, Y. J.), Yang CS (Yang, C. S.), Chen WK (Chen, W. K.), Lee MC (Lee, M. C.), Chang WH (Chang, W. H.), Chou WC (Chou, W. C.), Wang JS (Wang, J. S.), Huang WJ (Huang, W. J.), Jeng ES (Jeng, Erik S.) , "Effect of ZnSe partial capping on the ripening dynamics of CdSe quantum dots " ,(2007) Appl. Phys. Lett. 90, 083116 , 2007年02月
 
2.


 
W. C. Ke, L. Lee, C. Y. Chen, W. C. Tsai, W.-H. Chang*, W. C. Chou, M. C. Lee,, "Impacts of ammonia background flows on structural and photoluminescence properties of InN dots grown on GaN by flow-rate modulation epitaxy" , Appl. Phys. Lett. 89, 263117, 2006年12月
 
3.

 
Lee L, Ku CS, Ke WC, Ho CW, Huang HY, Lee MC, Chen WH, Chou WC, Chen WK, "Current properties of GaNV-defect using conductive atomic force microscopy" , Jpn. J. Appl. Phys. 45, L817, 2006年08月
 
4.


 
Ke WC, Fu CP, Chen CY, Lee L, Ku CS, Chou WC, Chang WH, Lee MC, Chen WK, Lin WJ, Cheng YC, "Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy" , Appl. Phys. Lett. 88, 191913, 2006年05月
 
5.

 
Ke WC, Fu CP, Huang CC, Ku CS, Lee L, Chen CY, Tsai WC, Chen WK, Lee MC, Chou WC, Lin WJ, Cheng YC, "Optical properties and carrier dynamics of self-assembled GaN/Al0.11Ga0.89N quantum dots" , Nanotechnology 17, 2609, 2006年05月
 
6.

 
Lai YJ, Lin YC, Fu CP, Yang CS, Chia CH, Chuu DS, Chen WK, Lee MC, Chou WC, Kuo MC, Wang JS, "Growth mode transfer of self-assembled CdSe quantum dots grown by molecular beam epitaxy" , J. Cryst. Growth 286, 338, 2006年01月
 
7.

 
Chen SH, Hou SP, Hsieh JH, Chang FC, Chen WK, "Advanced electrical imaging of dislocations in Mg-In-codoped GaN films" , J. Vac. Sci. Technol. B 24, 108, 2006年01月
 
8.

 
C. S. Yang, Y. J. Lai, W. C. Chou*, W. K. Chen, M.-C. Lee, M. C. Kuo, J. Lee, J. L. Shen, D. J. Jang, and Y. C. Cheng, "Optical properties of self-assembled ZnTe quantum dots grown by molecular-beam epitaxy" , J. Appl. Phys. 97(3), 033514, 2005年
 
9.

 
F. C. Chang, W. C. Chou, W. H. Chen, M.-C. Lee, W. K. Chen*, and H. Y. Huang, "Photoluminescence studies of In-doped GaN:Mg films" , Jpn. J. Appl. Phys. 44, 754, 2005年
 
10.

 
H. Y. Huang, C. S. Ku, W. Z. Ke, N. E. Tang, W. K. Chen, W. H. Chen, M.-C. Lee, "Spatially-resolved photoluminescence studies of V-shaped pits on Al0.16Ga0.84N" , J. Appl. Phys. 95, 2172-2174, 2004年